2sC1472(k) silicon npn epitaxial, darlington application high gain amplifier outline 1. emitter 2. collector 3. base 3 2 1 to-92 (1) 3 2 1 www.datasheet.net/ datasheet pdf - http://www..co.kr/
2sC1472 (k) 2 absolute maximum ratings (ta = 25?) item symbol ratings unit collector to base voltage v cbo 40 v collector to emitter voltage v ceo 30 v emitter to base voltage v ebo 10 v collector current i c 300 ma collector peak current i c(peak) 500 ma collector power dissipation p c 500 mw junction temperature tj 150 c storage temperature tstg ?5 to +150 c www.datasheet.net/ datasheet pdf - http://www..co.kr/
2sC1472 (k) 3 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions collector to emitter breakdown voltage v (br)ceo 30 v i c = 1 ma, r be = collector cutoff current i cbo 100 na v cb = 30 v, i e = 0 emitter cutoff current i ebo 100 na v eb = 10 v, i c = 0 dc current transfer ratio h fe1 * 1 2000 100000 i c = 10 ma, v ce = 5 v h fe2 * 1 3000 i c = 100 ma, v ce = 5 v (pulse test) h fe3 * 1 3000 i c = 400 ma, v ce = 5 v (pulse test) collector to emitter saturation voltage v ce(sat) 1.5 v i c = 100 ma, i b = 0.1 ma base to emitter voltage v be(sat) 2.0 v i c = 100 ma, i b = 0.1 ma gain bandwidth product f t 50 mhz v ce = 5 v, i c = 10 ma collector output capacitance cob 10 pf v cb = 10 v, i e = 0, f = 1 mhz turn on time t on 60 ns v cc = 11 v i c = 100 i b1 = 100 ma i b2 = ? b1 turn off time t off 800 ns storage time t stg 350 ns note: 1. the 2sC1472(k) is grouped by h fe as follows. ab h fe1 2000 to 100000 5000 to 100000 h fe2 3000 min 10000 min h fe3 3000 min 10000 min switching time test circuit 50 50 0.002 ? v 6 k 100 11 v 6 k d.u.t. crt p.g. tr, tf 15 ns pw 3 10 m s duty ratio 10% + 50 0.002 + unit r : w c : m f 13 v 0 0 10% response waveform 90% t on t off t d t stg input output 90% 10% 10% 90% www.datasheet.net/ datasheet pdf - http://www..co.kr/
2sC1472 (k) 4 150 50 100 ambient temperature ta ( c) 600 400 200 0 maximum collector dissipation curve collector power dissipation p c (mw) 10 2.0 6.0 4.0 8.0 collector to emitter voltage v ce (v) 500 300 400 200 100 0 typical output characteristics collector current i c (ma) i b = 0 2 m a 4 6 8 10 12 20 25 14 16 18 30 35 p c = 500 mw 50 10 30 20 40 collector to emitter voltage v ce (v) 200 120 160 80 40 0 typical output characteristics collector current i c (ma) i b = 0 0.5 m a pulse 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 p c = 500 mw collector to emitter voltage v ce (v) 10,000 1,000 100 10 1.0 0.1 0.01 010 30 20 collector cutoff current vs. collector to emitter voltage collector cutoff current i ceo (na) t c = 25 c r be = 50 75 100 www.datasheet.net/ datasheet pdf - http://www..co.kr/
2sC1472 (k) 5 500 100 5.0 50 20 10 200 collector current i c (ma) 80 50 40 30 20 10 0 70 60 2.0 dc current transfer ratio vs. collector current dc current transfer ratio h fe ( 10 3 ) v ce = 5 v pulse ta = 100 c 75 50 25 ?5 ?0 0 500 100 550 20 10 200 collector current i c (ma) 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 12 collector to emitter saturation voltage vs. collector current collector to emitter saturation voltage v ce (sat) (v) i c = 1,000 i b ta = ?0 c pulse ?5 25 50 75 100 0 base current i b ( m a) 2.4 2.0 1.6 1.2 0.8 0.4 0 1 100 30 300 3 10 1,000 collector to emitter saturation voltage vs. base current collector to emitter saturation voltage v ce (sat) (v) pulse ta = 25 c i c = 500 ma 20 50 100 200 75 collector current i c (ma) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 1 100 20 200 210 5 50 500 base to emitter saturation voltage vs. collector current base to emitter saturation voltage v be (sat) (v) pulse i c = 1,000 i b ta = ?0 c ?5 25 50 100 0 www.datasheet.net/ datasheet pdf - http://www..co.kr/
2sC1472 (k) 6 collector to base voltage v cb (v) emitter to base voltage v eb (v) 10 8 6 4 2 0 0.1 30 3 1.0 10 0.3 input and output capacitance vs. voltage collector output capacitance c ob (pf) emitter input capacitance c ib (pf) f = 1 mhz c ob (i e = 0) c ib (i c = 0) base current i c (ma) 30 10 3 1.0 0.3 0.1 0.03 0.3 30 10 100 1.0 3 300 switching time t ( m s) switching time vs. collector current t off t stg t on t d i c = 100 i b1 = ?00 i b2 v cc = 10.5 v switching time test circuit 50 50 0.002 ? v 10.5 v d.u.t. crt p.g. tr, tf 15 ns pw 3 10 m s duty ratio 10% + 50 0.002 + unit r : w c : m f 13 v 0 0 10% response waveform 90% t on t off t d t stg input output 90% 10% 10% 90% www.datasheet.net/ datasheet pdf - http://www..co.kr/
0.60 max 0.5 0.1 4.8 0.3 3.8 0.3 5.0 0.2 0.7 2.3 max 12.7 min 0.5 1.27 2.54 hitachi code jedec eiaj weight (reference value) to-92 (1) conforms conforms 0.25 g unit: mm www.datasheet.net/ datasheet pdf - http://www..co.kr/
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